INFLUENCE OF SURFACE RECOMBINATION ON PHOTOVOLTAIC CONVERSION PROCESSES IN SILICON PHOTOSENSITIVE STRUCTURES
نویسندگان
چکیده
منابع مشابه
Photosensitive porous silicon based structures
We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics and photosensitivity spectra indicate that for structures with a thin PS layer the photosensitivity is determined by PS/c-Si heterojunctions (HJ), wh...
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2014 Metal-Insulator-InSb structures, for infrared imaging devices operating in the charge injection mode, have been developed. The sensitivity of devices is conditioned by the generationrecombination processes occurring in the semiconductor. Several methods have been used to study these generation-recombination processes. C(t) experiments in depletion and inversion regime, conductance measurem...
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متن کاملInfluence of Surface Roughness Scattering on Spin Lifetime in Silicon
Silicon is an ideal material for spintronic applications [1] due to long spin lifetime, however, considerable spin relaxation in gated silicon structures was experimentally observed [2]. Surface roughness scattering determines the transport in the channel at high carrier concentration in thin silicon films [3]. Here we investigate the spin relaxation due to surface roughness. The surface roughn...
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ژورنال
عنوان ژورنال: Sensor Electronics and Microsystem Technologies
سال: 2011
ISSN: 2415-3508,1815-7459
DOI: 10.18524/1815-7459.2011.2.116602